Dr. Jingjing Shi’s research focuses on understanding energy transport and conversion to solve thermal challenges in different systems, with an emphasis on wide and ultra-wide bandgap semiconductor devices for future power and radio-frequency applications. Her work utilizes multiscale modeling and experimental methods to understand effects of different mechanisms like atomistic structures and defects on energy transport in materials and at interfaces. The findings are leveraged for the electro-thermal codesign of power and RF devices to maximize their performance.

Dr. Shi is now a Postdoctoral Fellow in the Electronics Manufacturing and Reliability Laboratory in the Woodruff School of Mechanical Engineering at Georgia Institute of Technology. She received her Ph.D. degree in Mechanical Engineering from Purdue University, and her bachelor’s degree in Engineering Mechanics and Aerospace Engineering from Tsinghua University.